Chips · Oct 22, 2026, 10:51
Infineon Advances NVIDIA 800 VDC Work With GaN, Switching to 1 MHz
Infineon is putting gallium nitride in the intermediate bus converter for NVIDIA's 800 VDC AI racks, but the release gives no launch date, customer, volume or pricing.
Infineon CEO Jochen Hanebeck, quoted in the release. Infineon did not publish a photo of the GaN converters.
Image: Infineon
Source · Press image from the Infineon newsroom, used for news reporting.
Infineon Technologies said on Oct. 21 that it is advancing its collaboration with NVIDIA on 800 volt direct current (VDC) power architectures for AI data centers, with gallium nitride (GaN) chips at the center of the high-voltage intermediate bus converter (IBC) stage. The company timed the announcement to NVIDIA's GTC Berlin developer conference.
Infineon says GaN lets the intermediate bus converter switch at up to 1 MHz; the figure is a vendor claim.
Illustration (AI-generated)
The IBC is the stage that steps the main bus voltage down to a lower-voltage rail feeding accelerator cards. Infineon said GaN switches faster than silicon with lower losses, which allows switching frequencies of up to 1 MHz at this stage. Higher frequency lets magnetic components and passives shrink, which the company said raises power density and lowers board height.